TIP147 [Wing Shing]

SILICON DARLINGTON TRANSISTOR PNP EPITAXIAL(HIGH DC CURRENT GAIN); 硅达林顿晶体管PNP外延（高直流电流增益）

TIP147


型号：	TIP147
厂家：	WING SHING COMPUTER COMPONENTS
描述：	SILICON DARLINGTON TRANSISTOR PNP EPITAXIAL(HIGH DC CURRENT GAIN) 硅达林顿晶体管PNP外延（高直流电流增益）晶体晶体管达林顿晶体管
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中文：	中文翻译
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PNP EPITAXIAL

TIP145/146/147

SILICON DARLINGTON TRANSISTOR

HIGH DC CURRENT GAIN

•Complementary to TIP140/141/142

SC-65

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Characteristic

Collector-Base

Symbol

Rating

Unit

V^CBO

-60

-80

-100

-60

-80

-100

-5

-10

-15

-0.5

125

150

-50~150

V

V

V

V

V

V

V

A

A

A

W

°C

Voltage :TIP145

:TIP146

:TIP147

V^CEO

Collector-

EmitterVoltage :TIP140

:TIP146

:TIP147

V^EBO

I^C

Emitter-Base voltage

Collector Current (DC)

IB

P^C

T^j

Collector Current (Pulse)

Base Current (DC)

Collector Dissipation (Tc=25°C)

Junction Temperature

Storage Temperature

Tstg

°C

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

ELECTRICAL CHARACTERISTICS (Ta=25°C)

Characterristic

Symbol

Test Condition

Min

Typ

Max

Unit

Collector Emitter Sustaining Voltage :TIP145

V^CEO(SUS)

I^C=-30mA,

I^B=0

60

80

100

V

V

V

:TIP146

:TIP147

Collector Cutoff Current

Collector Cutoff Current

:TIP145

:TIP146

:TIP147

:TIP145

:TIP146

:TIP147

I^CEO

V^CE= -30V ,

V^CE= -40V ,

V^CE= -50V ,

V^CB= -60V ,

V^CB= -80V ,

V^CB= -100V ,

V^EB= -5V ,

V^CE=- 4V ,

V^CE= -4V , I^C=-10A

I^C=-5A , I^B=-10mA

I^B=0

I^B=0

I^B=0

I^E=0

I^E=0

I^E=0

I^C=0

I^C=-5A

2

2

2

1

1

1

2

mA

mA

mA

mA

mA

mA

mA

I^CBO

Emitter Cutoff Current

DC Current Gain

I^EBO

h^FE

1000

500

Collector- Emitter Saturation Voltage

V^CE(sat)

2

3

3.5

3

V

V

V

I^C=-10A , I^B=-40mA

I^C=-10A , I^B=-40mA

V^CE= -4V , I^C=-10A

V^CC= -30V , I^C=-5A

Base- Emitter Saturation Voltage

Base- Emitter On Voltage

Delay Time

Rise Time

Storage Time

V^BE(sat)

V^BE(on)

t^d

t^r

t^s

t^f

V

0.15

0.55

2.5

µS

µS

µS

µS

I^B=-20mA

I^B1= I^B2

Fall

Time

2.5

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